1-WA2
Evaluating Embedded Non-Volatile Memory for 65 nm and Beyond
Wednesday, February 6 | 9:40 am – 10:20 am
Wlodek Kurjanowicz, Chief Technical Officer, Sidense
Antifuse technology has been employed in some capacity by the semiconductor industry for more than 40 years. However, it has only recently found its niche as an embedded mechanism for inexpensive, secure, and reliable non-volatile storage of data and firmware on both digital and analog chips. This paper will review the history of antifuse technology in silicon products and describe in detail one type of antifuse based on non-reversible oxide breakdown. It will conclude by comparing some key characteristics of different oxide-breakdown memory storage technologies, along with more traditional embedded NVM technologies, for implementation at the 65 nm process node and beyond.